IXTP18P10T Pricing (USD) [50279PC Stock]
- 1 pcs$0.89473
- 10 pcs$0.80777
- 100 pcs$0.64910
- 500 pcs$0.50486
- 1,000 pcs$0.41831
- Nimewo Pati:
- IXTP18P10T
- Manifakti:
- IXYS
- Detaye deskripsyon:
- MOSFET P-CH 100V 18A TO-220.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - IGBTs - Modil yo, Transistors - Objektif espesyal, Diodes - RF, Modil pouvwa chofè, Tiristors - SCR and Diodes - Bridge rèktifikateur ...
- Avantaj konpetitif:
- We specialize in IXYS IXTP18P10T electronic components. IXTP18P10T can be shipped within 24 hours after order. If you have any demands for IXTP18P10T, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXTP18P10T Atribi pwodwi yo
Nimewo Pati :
IXTP18P10T
Manifakti :
IXYS
Deskripsyon :
MOSFET P-CH 100V 18A TO-220
Seri :
TrenchP™
Estati Pati :
Active
FET Kalite :
P-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
18A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
120 mOhm @ 9A, 10V
Vgs (th) (Max) @ Id :
4.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
39nC @ 10V
Vgs (Max) :
±15V
Antre kapasite (Ciss) (Max) @ Vds :
2100pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
83W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-220AB
Pake / Ka :
TO-220-3
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