Manifakti :
Taiwan Semiconductor Corporation
Deskripsyon :
DIODE GEN PURP 400V 800MA SUBSMA
Voltage - DC Ranvèse (Vr) (Max) :
400V
Kouran - Mwayèn Rèktifye (Io) :
800mA
Voltage - Forward (Vf) (Max) @ Si :
1.3V @ 800mA
Vitès :
Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
150ns
Kouran - Fèy Reverse @ Vr :
5µA @ 400V
Kapasite @ Vr, F :
10pF @ 4V, 1MHz
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
Sub SMA
Operating Tanperati - Junction :
-55°C ~ 150°C