RGTH80TS65DGC11 Pricing (USD) [23033PC Stock]
- 1 pcs$1.78924
- 10 pcs$1.59666
- 25 pcs$1.43686
- 100 pcs$1.30910
- 250 pcs$1.18136
- 500 pcs$1.00567
- 1,000 pcs$0.84816
- 2,500 pcs$0.80777
- Nimewo Pati:
- RGTH80TS65DGC11
- Manifakti:
- Rohm Semiconductor
- Detaye deskripsyon:
- IGBT 650V 70A 234W TO-247N.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - RF, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Tiristors - SCR - Modil yo, Diodes - Rèkteur - Arrays, Transistors - Objektif espesyal, Diodes - Bridge rèktifikateur, Transistors - Pwogramasyon Unijunction and Diodes - Zener - Single ...
- Avantaj konpetitif:
- We specialize in Rohm Semiconductor RGTH80TS65DGC11 electronic components. RGTH80TS65DGC11 can be shipped within 24 hours after order. If you have any demands for RGTH80TS65DGC11, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RGTH80TS65DGC11 Atribi pwodwi yo
Nimewo Pati :
RGTH80TS65DGC11
Manifakti :
Rohm Semiconductor
Deskripsyon :
IGBT 650V 70A 234W TO-247N
Seri :
-
Estati Pati :
Active
Kalite IGBT :
Trench Field Stop
Voltage - Pèseptè ki emèt deba (Max) :
650V
Kouran - Pèseptè (Ic) (Max) :
70A
Kouran - Pèseptè batman (Icm) :
160A
Vce (sou) (Max) @ Vge, Ic :
2.1V @ 15V, 40A
Pouvwa - Max :
234W
Oblije chanje enèji :
-
Kalite Antre :
Standard
Gate chaje :
79nC
Td (on / off) @ 25 ° C :
34ns/120ns
Kondisyon egzamen an :
400V, 40A, 10 Ohm, 15V
Ranvèse Tan Reverse (trr) :
58ns
Operating Tanperati :
-40°C ~ 175°C (TJ)
Mounting Kalite :
Through Hole
Pake / Ka :
TO-247-3
Pake Aparèy Founisè :
TO-247N
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