ON Semiconductor - NVMFS6H800NWFT1G

KEY Part #: K6397188

NVMFS6H800NWFT1G Pricing (USD) [53443PC Stock]

  • 1 pcs$0.73163

Nimewo Pati:
NVMFS6H800NWFT1G
Manifakti:
ON Semiconductor
Detaye deskripsyon:
TRENCH 8 80V NFET.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - SCR, Transistors - Bipolè (BJT) - Single, Transistors - FETs, MOSFETs - Arrays, Transistors - IGBTs - Arrays, Modil pouvwa chofè, Transistors - Bipolè (BJT) - RF, Diodes - RF and Transistors - IGBTs - Modil yo ...
Avantaj konpetitif:
We specialize in ON Semiconductor NVMFS6H800NWFT1G electronic components. NVMFS6H800NWFT1G can be shipped within 24 hours after order. If you have any demands for NVMFS6H800NWFT1G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

NVMFS6H800NWFT1G Atribi pwodwi yo

Nimewo Pati : NVMFS6H800NWFT1G
Manifakti : ON Semiconductor
Deskripsyon : TRENCH 8 80V NFET
Seri : Automotive, AEC-Q101
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 80V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 28A (Ta), 203A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 2.1 mOhm @ 50A, 10V
Vgs (th) (Max) @ Id : 4V @ 330µA
Chaje Gate (Qg) (Max) @ Vgs : 85nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 5530pF @ 40V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 3.8W (Ta), 200W (Tc)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : 5-DFN (5x6) (8-SOFL)
Pake / Ka : 8-PowerTDFN, 5 Leads

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