IXYS - IXTU08N100P

KEY Part #: K6417869

IXTU08N100P Pricing (USD) [44008PC Stock]

  • 1 pcs$1.02683
  • 75 pcs$1.02172

Nimewo Pati:
IXTU08N100P
Manifakti:
IXYS
Detaye deskripsyon:
MOSFET N-CH 1000V 8A TO-251.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - RF, Tiristors - DIACs, SIDACs, Transistors - Bipolè (BJT) - RF, Tiristors - SCR, Transistors - Objektif espesyal, Modil pouvwa chofè, Tiristors - TRIACs and Diodes - Zener - Single ...
Avantaj konpetitif:
We specialize in IXYS IXTU08N100P electronic components. IXTU08N100P can be shipped within 24 hours after order. If you have any demands for IXTU08N100P, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXTU08N100P Atribi pwodwi yo

Nimewo Pati : IXTU08N100P
Manifakti : IXYS
Deskripsyon : MOSFET N-CH 1000V 8A TO-251
Seri : -
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 1000V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 8A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : -
RD sou (Max) @ Id, Vgs : -
Vgs (th) (Max) @ Id : -
Chaje Gate (Qg) (Max) @ Vgs : -
Vgs (Max) : -
Antre kapasite (Ciss) (Max) @ Vds : -
Karakteristik FET : -
Disipasyon Pouvwa (Max) : -
Operating Tanperati : -
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-251
Pake / Ka : TO-251-3 Short Leads, IPak, TO-251AA