[8656PC Stock]
- Nimewo Pati:
- IPA60R520E6XKSA1
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET N-CH 600V 8.1A TO220.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Arrays, Diodes - RF, Tiristors - DIACs, SIDACs, Transistors - Pwogramasyon Unijunction, Diodes - Rèkteur - Arrays, Transistors - IGBTs - Single, Transistors - Bipolè (BJT) - RF and Transistors - FETs, MOSFETs - Single ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies IPA60R520E6XKSA1 electronic components. IPA60R520E6XKSA1 can be shipped within 24 hours after order. If you have any demands for IPA60R520E6XKSA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPA60R520E6XKSA1 Atribi pwodwi yo
Nimewo Pati :
IPA60R520E6XKSA1
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET N-CH 600V 8.1A TO220
Seri :
CoolMOS™
Estati Pati :
Obsolete
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
600V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
8.1A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
520 mOhm @ 2.8A, 10V
Vgs (th) (Max) @ Id :
3.5V @ 230µA
Chaje Gate (Qg) (Max) @ Vgs :
23.4nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
512pF @ 100V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
29W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
PG-TO220-FP
Pake / Ka :
TO-220-3 Full Pack
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