Diodes Incorporated - DMN2058UW-7

KEY Part #: K6393322

DMN2058UW-7 Pricing (USD) [1166683PC Stock]

  • 1 pcs$0.03170

Nimewo Pati:
DMN2058UW-7
Manifakti:
Diodes Incorporated
Detaye deskripsyon:
MOSFET N-CHAN 8V 24V SOT323.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - Zener - Arrays, Transistors - FETs, MOSFETs - Arrays, Tiristors - TRIACs, Diodes - Zener - Single, Transistors - Objektif espesyal, Transistors - IGBTs - Modil yo and Diodes - Varyab kapasite (Varicaps, Varactors) ...
Avantaj konpetitif:
We specialize in Diodes Incorporated DMN2058UW-7 electronic components. DMN2058UW-7 can be shipped within 24 hours after order. If you have any demands for DMN2058UW-7, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

DMN2058UW-7 Atribi pwodwi yo

Nimewo Pati : DMN2058UW-7
Manifakti : Diodes Incorporated
Deskripsyon : MOSFET N-CHAN 8V 24V SOT323
Seri : -
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 3.5A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 1.8V, 10V
RD sou (Max) @ Id, Vgs : 42 mOhm @ 3A, 10V
Vgs (th) (Max) @ Id : 1.2V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 7.7nC @ 10V
Vgs (Max) : ±12V
Antre kapasite (Ciss) (Max) @ Vds : 281pF @ 10V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 500mW (Ta)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : SOT-323
Pake / Ka : SC-70, SOT-323