STP80N10F7 Pricing (USD) [33884PC Stock]
- 1 pcs$1.21633
- 10 pcs$1.04316
- 100 pcs$0.83821
- 500 pcs$0.65193
- 1,000 pcs$0.54016
- Nimewo Pati:
- STP80N10F7
- Manifakti:
- STMicroelectronics
- Detaye deskripsyon:
- MOSFET N-CH 100V 80A TO-220.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Pwogramasyon Unijunction, Diodes - Rèkteur - Single, Transistors - IGBTs - Arrays, Transistors - FETs, MOSFETs - Single, Transistors - IGBTs - Modil yo, Transistors - Objektif espesyal, Transistors - Bipolè (BJT) - Single and Tranzistò - Bipolè (BJT) - Single, Pre-partial ...
- Avantaj konpetitif:
- We specialize in STMicroelectronics STP80N10F7 electronic components. STP80N10F7 can be shipped within 24 hours after order. If you have any demands for STP80N10F7, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
STP80N10F7 Atribi pwodwi yo
Nimewo Pati :
STP80N10F7
Manifakti :
STMicroelectronics
Deskripsyon :
MOSFET N-CH 100V 80A TO-220
Seri :
DeepGATE™, STripFET™ VII
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
80A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
10 mOhm @ 40A, 10V
Vgs (th) (Max) @ Id :
4.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
45nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
3100pF @ 50V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
110W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-220
Pake / Ka :
TO-220-3
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