IXYS - IXGN82N120B3H1

KEY Part #: K6534660

IXGN82N120B3H1 Pricing (USD) [2533PC Stock]

  • 1 pcs$18.00306
  • 20 pcs$17.91349

Nimewo Pati:
IXGN82N120B3H1
Manifakti:
IXYS
Detaye deskripsyon:
IGBT 1200V 145A SOT-227.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Diodes - Zener - Arrays, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - Zener - Single, Transistors - JFETs, Diodes - RF, Transistors - FETs, MOSFETs - Arrays and Diodes - Rèkteur - Single ...
Avantaj konpetitif:
We specialize in IXYS IXGN82N120B3H1 electronic components. IXGN82N120B3H1 can be shipped within 24 hours after order. If you have any demands for IXGN82N120B3H1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXGN82N120B3H1 Atribi pwodwi yo

Nimewo Pati : IXGN82N120B3H1
Manifakti : IXYS
Deskripsyon : IGBT 1200V 145A SOT-227
Seri : GenX3™
Estati Pati : Active
Kalite IGBT : PT
Nou konte genyen : Single
Voltage - Pèseptè ki emèt deba (Max) : 1200V
Kouran - Pèseptè (Ic) (Max) : 145A
Pouvwa - Max : 595W
Vce (sou) (Max) @ Vge, Ic : 3.2V @ 15V, 82A
Kouran - Cutoff Pèseptè (Max) : 50µA
Antre kapasite (Cies) @ Vce : 7.9nF @ 25V
Antre : Standard
NTC thermistor : No
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Chassis Mount
Pake / Ka : SOT-227-4, miniBLOC
Pake Aparèy Founisè : SOT-227B

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