SCTW90N65G2V Pricing (USD) [1553PC Stock]
- 1 pcs$27.86749
- Nimewo Pati:
- SCTW90N65G2V
- Manifakti:
- STMicroelectronics
- Detaye deskripsyon:
- SILICON CARBIDE POWER MOSFET 650.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Pwogramasyon Unijunction, Diodes - Rèkteur - Arrays, Tiristors - TRIACs, Transistors - Bipolè (BJT) - Arrays, Diodes - Bridge rèktifikateur, Modil pouvwa chofè, Transistors - Bipolè (BJT) - RF and Transistors - IGBTs - Modil yo ...
- Avantaj konpetitif:
- We specialize in STMicroelectronics SCTW90N65G2V electronic components. SCTW90N65G2V can be shipped within 24 hours after order. If you have any demands for SCTW90N65G2V, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SCTW90N65G2V Atribi pwodwi yo
Nimewo Pati :
SCTW90N65G2V
Manifakti :
STMicroelectronics
Deskripsyon :
SILICON CARBIDE POWER MOSFET 650
Seri :
-
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
SiCFET (Silicon Carbide)
Drenaj nan Voltage Sous (Vdss) :
650V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
90A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
18V
RD sou (Max) @ Id, Vgs :
25 mOhm @ 50A, 18V
Vgs (th) (Max) @ Id :
5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
157nC @ 18V
Vgs (Max) :
+22V, -10V
Antre kapasite (Ciss) (Max) @ Vds :
3300pF @ 400V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
390W (Tc)
Operating Tanperati :
-55°C ~ 200°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
HiP247™
Pake / Ka :
TO-247-3
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