Nimewo Pati :
DSP10G-TR-E
Manifakti :
ON Semiconductor
Deskripsyon :
DIODE GEN PURP 600V 1A 2SHP
Voltage - DC Ranvèse (Vr) (Max) :
600V
Kouran - Mwayèn Rèktifye (Io) :
1A
Voltage - Forward (Vf) (Max) @ Si :
1.1V @ 1A
Vitès :
Standard Recovery >500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
-
Kouran - Fèy Reverse @ Vr :
10µA @ 600V
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
2-SHP
Operating Tanperati - Junction :
150°C (Max)