Infineon Technologies - IPP70N04S406AKSA1

KEY Part #: K6398797

IPP70N04S406AKSA1 Pricing (USD) [59949PC Stock]

  • 1 pcs$0.65224
  • 500 pcs$0.31684

Nimewo Pati:
IPP70N04S406AKSA1
Manifakti:
Infineon Technologies
Detaye deskripsyon:
MOSFET N-CH 40V 70A TO220-3-1.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Pwogramasyon Unijunction, Transistors - Objektif espesyal, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Tiristors - DIACs, SIDACs, Diodes - Bridge rèktifikateur, Tiristors - TRIACs, Transistors - JFETs and Diodes - Zener - Arrays ...
Avantaj konpetitif:
We specialize in Infineon Technologies IPP70N04S406AKSA1 electronic components. IPP70N04S406AKSA1 can be shipped within 24 hours after order. If you have any demands for IPP70N04S406AKSA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPP70N04S406AKSA1 Atribi pwodwi yo

Nimewo Pati : IPP70N04S406AKSA1
Manifakti : Infineon Technologies
Deskripsyon : MOSFET N-CH 40V 70A TO220-3-1
Seri : OptiMOS™
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 40V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 70A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 6.5 mOhm @ 70A, 10V
Vgs (th) (Max) @ Id : 4V @ 26µA
Chaje Gate (Qg) (Max) @ Vgs : 32nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 2550pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 58W (Tc)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : PG-TO220-3-1
Pake / Ka : TO-220-3