IPC302N12N3X1SA1 Pricing (USD) [29358PC Stock]
- 1 pcs$2.71030
- Nimewo Pati:
- IPC302N12N3X1SA1
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET N-CH 120V 1A SAWN ON FOIL.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - Arrays, Tiristors - DIACs, SIDACs, Diodes - Zener - Arrays, Diodes - Varyab kapasite (Varicaps, Varactors), Diodes - Rèkteur - Single, Transistors - FETs, MOSFETs - Single, Diodes - Rèkteur - Arrays and Transistors - Bipolè (BJT) - Arrays ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies IPC302N12N3X1SA1 electronic components. IPC302N12N3X1SA1 can be shipped within 24 hours after order. If you have any demands for IPC302N12N3X1SA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPC302N12N3X1SA1 Atribi pwodwi yo
Nimewo Pati :
IPC302N12N3X1SA1
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET N-CH 120V 1A SAWN ON FOIL
Seri :
OptiMOS™
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
120V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
1A (Tj)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
100 mOhm @ 2A, 10V
Vgs (th) (Max) @ Id :
4V @ 275µA
Chaje Gate (Qg) (Max) @ Vgs :
-
Vgs (Max) :
-
Antre kapasite (Ciss) (Max) @ Vds :
-
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
-
Operating Tanperati :
-
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
Sawn on foil
Pake / Ka :
Die
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