FQD10N20CTM Pricing (USD) [296253PC Stock]
- 1 pcs$0.12485
- 2,500 pcs$0.11544
- Nimewo Pati:
- FQD10N20CTM
- Manifakti:
- ON Semiconductor
- Detaye deskripsyon:
- MOSFET N-CH 200V 7.8A DPAK.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Bridge rèktifikateur, Diodes - Rèkteur - Arrays, Diodes - Rèkteur - Single, Transistors - FETs, MOSFETs - RF, Diodes - Zener - Arrays, Transistors - Bipolè (BJT) - Single, Tranzistò - Bipolè (BJT) - Single, Pre-partial and Transistors - Bipolè (BJT) - Arrays ...
- Avantaj konpetitif:
- We specialize in ON Semiconductor FQD10N20CTM electronic components. FQD10N20CTM can be shipped within 24 hours after order. If you have any demands for FQD10N20CTM, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FQD10N20CTM Atribi pwodwi yo
Nimewo Pati :
FQD10N20CTM
Manifakti :
ON Semiconductor
Deskripsyon :
MOSFET N-CH 200V 7.8A DPAK
Seri :
QFET®
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
200V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
7.8A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
360 mOhm @ 3.9A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
26nC @ 10V
Vgs (Max) :
±30V
Antre kapasite (Ciss) (Max) @ Vds :
510pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
50W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
D-Pak
Pake / Ka :
TO-252-3, DPak (2 Leads + Tab), SC-63
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