Infineon Technologies - IPS70R1K4CEAKMA1

KEY Part #: K6419677

IPS70R1K4CEAKMA1 Pricing (USD) [124694PC Stock]

  • 1 pcs$0.26103
  • 10 pcs$0.22979
  • 100 pcs$0.17714
  • 500 pcs$0.13121
  • 1,000 pcs$0.10497

Nimewo Pati:
IPS70R1K4CEAKMA1
Manifakti:
Infineon Technologies
Detaye deskripsyon:
MOSFET NCH 700V 5.4A TO251.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Arrays, Tiristors - TRIACs, Transistors - FETs, MOSFETs - RF, Transistors - IGBTs - Single, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - Bipolè (BJT) - Single, Diodes - Rèkteur - Single and Transistors - Bipolè (BJT) - RF ...
Avantaj konpetitif:
We specialize in Infineon Technologies IPS70R1K4CEAKMA1 electronic components. IPS70R1K4CEAKMA1 can be shipped within 24 hours after order. If you have any demands for IPS70R1K4CEAKMA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPS70R1K4CEAKMA1 Atribi pwodwi yo

Nimewo Pati : IPS70R1K4CEAKMA1
Manifakti : Infineon Technologies
Deskripsyon : MOSFET NCH 700V 5.4A TO251
Seri : CoolMOS™
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 700V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 5.4A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 1.4 Ohm @ 1A, 10V
Vgs (th) (Max) @ Id : 3.5V @ 100µA
Chaje Gate (Qg) (Max) @ Vgs : 10.5nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 225pF @ 100V
Karakteristik FET : Super Junction
Disipasyon Pouvwa (Max) : 53W (Tc)
Operating Tanperati : -40°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : PG-TO251
Pake / Ka : TO-251-3 Stub Leads, IPak