[9589PC Stock]
- Nimewo Pati:
- IRGP6630D-EPBF
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- IGBT 600V 30A TO247AD.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - DIACs, SIDACs, Transistors - Bipolè (BJT) - Single, Transistors - FETs, MOSFETs - Arrays, Transistors - JFETs, Transistors - FETs, MOSFETs - RF, Transistors - Objektif espesyal, Transistors - Bipolè (BJT) - Arrays and Transistors - Pwogramasyon Unijunction ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies IRGP6630D-EPBF electronic components. IRGP6630D-EPBF can be shipped within 24 hours after order. If you have any demands for IRGP6630D-EPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRGP6630D-EPBF Atribi pwodwi yo
Nimewo Pati :
IRGP6630D-EPBF
Manifakti :
Infineon Technologies
Deskripsyon :
IGBT 600V 30A TO247AD
Seri :
-
Estati Pati :
Obsolete
Kalite IGBT :
-
Voltage - Pèseptè ki emèt deba (Max) :
600V
Kouran - Pèseptè (Ic) (Max) :
47A
Kouran - Pèseptè batman (Icm) :
54A
Vce (sou) (Max) @ Vge, Ic :
1.95V @ 15V, 18A
Pouvwa - Max :
192W
Oblije chanje enèji :
75µJ (on), 350µJ (off)
Kalite Antre :
Standard
Gate chaje :
30nC
Td (on / off) @ 25 ° C :
40ns/95ns
Kondisyon egzamen an :
400V, 18A, 22 Ohm, 15V
Ranvèse Tan Reverse (trr) :
70ns
Operating Tanperati :
-40°C ~ 175°C (TJ)
Mounting Kalite :
Through Hole
Pake / Ka :
TO-247-3
Pake Aparèy Founisè :
TO-247AD
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