IRF40DM229 Pricing (USD) [99089PC Stock]
- 1 pcs$0.59330
- 4,800 pcs$0.59035
- Nimewo Pati:
- IRF40DM229
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET N-CH 40V 159A ISOMETRICMF.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - Single, Transistors - Bipolè (BJT) - Arrays, Diodes - Rèkteur - Single, Tiristors - SCR - Modil yo, Tiristors - TRIACs, Tiristors - SCR, Transistors - Pwogramasyon Unijunction and Tiristors - DIACs, SIDACs ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies IRF40DM229 electronic components. IRF40DM229 can be shipped within 24 hours after order. If you have any demands for IRF40DM229, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF40DM229 Atribi pwodwi yo
Nimewo Pati :
IRF40DM229
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET N-CH 40V 159A ISOMETRICMF
Seri :
StrongIRFET™
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
40V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
159A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
6V, 10V
RD sou (Max) @ Id, Vgs :
1.85 mOhm @ 97A, 10V
Vgs (th) (Max) @ Id :
3.9V @ 100µA
Chaje Gate (Qg) (Max) @ Vgs :
161nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
5317pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
83W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
DirectFET™ Isometric MF
Pake / Ka :
DirectFET™ Isometric MF
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