ON Semiconductor - FQB16N25CTM

KEY Part #: K6410595

[14082PC Stock]


    Nimewo Pati:
    FQB16N25CTM
    Manifakti:
    ON Semiconductor
    Detaye deskripsyon:
    MOSFET N-CH 250V 15.6A D2PAK.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Single, Tiristors - TRIACs, Transistors - IGBTs - Arrays, Transistors - FETs, MOSFETs - Single, Diodes - Bridge rèktifikateur, Tiristors - DIACs, SIDACs, Transistors - Pwogramasyon Unijunction and Tranzistò - Bipolè (BJT) - Single, Pre-partial ...
    Avantaj konpetitif:
    We specialize in ON Semiconductor FQB16N25CTM electronic components. FQB16N25CTM can be shipped within 24 hours after order. If you have any demands for FQB16N25CTM, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    FQB16N25CTM Atribi pwodwi yo

    Nimewo Pati : FQB16N25CTM
    Manifakti : ON Semiconductor
    Deskripsyon : MOSFET N-CH 250V 15.6A D2PAK
    Seri : QFET®
    Estati Pati : Obsolete
    FET Kalite : N-Channel
    Teknoloji : MOSFET (Metal Oxide)
    Drenaj nan Voltage Sous (Vdss) : 250V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 15.6A (Tc)
    Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
    RD sou (Max) @ Id, Vgs : 270 mOhm @ 7.8A, 10V
    Vgs (th) (Max) @ Id : 4V @ 250µA
    Chaje Gate (Qg) (Max) @ Vgs : 53.5nC @ 10V
    Vgs (Max) : ±30V
    Antre kapasite (Ciss) (Max) @ Vds : 1080pF @ 25V
    Karakteristik FET : -
    Disipasyon Pouvwa (Max) : 3.13W (Ta), 139W (Tc)
    Operating Tanperati : -55°C ~ 150°C (TJ)
    Mounting Kalite : Surface Mount
    Pake Aparèy Founisè : D²PAK (TO-263AB)
    Pake / Ka : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB