IXYS - IXTA26P20P

KEY Part #: K6399911

IXTA26P20P Pricing (USD) [18053PC Stock]

  • 1 pcs$2.62657
  • 10 pcs$2.34408
  • 100 pcs$1.92207
  • 500 pcs$1.55640
  • 1,000 pcs$1.31262

Nimewo Pati:
IXTA26P20P
Manifakti:
IXYS
Detaye deskripsyon:
MOSFET P-CH 200V 26A TO-263.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - TRIACs, Transistors - FETs, MOSFETs - Single, Diodes - Bridge rèktifikateur, Transistors - Bipolè (BJT) - Single, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Modil pouvwa chofè, Transistors - Bipolè (BJT) - Arrays, Pre-partial and Tiristors - SCR ...
Avantaj konpetitif:
We specialize in IXYS IXTA26P20P electronic components. IXTA26P20P can be shipped within 24 hours after order. If you have any demands for IXTA26P20P, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXTA26P20P Atribi pwodwi yo

Nimewo Pati : IXTA26P20P
Manifakti : IXYS
Deskripsyon : MOSFET P-CH 200V 26A TO-263
Seri : PolarP™
Estati Pati : Active
FET Kalite : P-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 200V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 26A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 170 mOhm @ 13A, 10V
Vgs (th) (Max) @ Id : 4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 56nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 2740pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 300W (Tc)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : TO-263 (IXTA)
Pake / Ka : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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