[13386PC Stock]
- Nimewo Pati:
- UPA2766T1A-E2-AY
- Manifakti:
- Renesas Electronics America
- Detaye deskripsyon:
- MOSFET N-CH 30V 130A 8HVSON.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - RF, Tiristors - DIACs, SIDACs, Transistors - IGBTs - Modil yo, Transistors - JFETs, Tiristors - SCR, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - IGBTs - Single and Diodes - Bridge rèktifikateur ...
- Avantaj konpetitif:
- We specialize in Renesas Electronics America UPA2766T1A-E2-AY electronic components. UPA2766T1A-E2-AY can be shipped within 24 hours after order. If you have any demands for UPA2766T1A-E2-AY, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
UPA2766T1A-E2-AY Atribi pwodwi yo
Nimewo Pati :
UPA2766T1A-E2-AY
Manifakti :
Renesas Electronics America
Deskripsyon :
MOSFET N-CH 30V 130A 8HVSON
Seri :
-
Estati Pati :
Obsolete
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
130A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
1.82 mOhm @ 39A, 4.5V
Vgs (th) (Max) @ Id :
-
Chaje Gate (Qg) (Max) @ Vgs :
257nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
10850pF @ 10V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
1.5W (Ta), 83W (Tc)
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
8-HVSON (5.4x5.15)
Pake / Ka :
8-PowerVDFN
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