Vishay Siliconix - IRF9Z34SPBF

KEY Part #: K6401061

IRF9Z34SPBF Pricing (USD) [51668PC Stock]

  • 1 pcs$0.76930
  • 10 pcs$0.68276
  • 100 pcs$0.53973
  • 500 pcs$0.41857
  • 1,000 pcs$0.31258

Nimewo Pati:
IRF9Z34SPBF
Manifakti:
Vishay Siliconix
Detaye deskripsyon:
MOSFET P-CH 60V 18A D2PAK.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - Single, Transistors - Objektif espesyal, Diodes - Bridge rèktifikateur, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Zener - Arrays, Transistors - IGBTs - Arrays, Tiristors - SCR - Modil yo and Diodes - Zener - Single ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IRF9Z34SPBF Atribi pwodwi yo

Nimewo Pati : IRF9Z34SPBF
Manifakti : Vishay Siliconix
Deskripsyon : MOSFET P-CH 60V 18A D2PAK
Seri : -
Estati Pati : Active
FET Kalite : P-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 18A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 140 mOhm @ 11A, 10V
Vgs (th) (Max) @ Id : 4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 34nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 1100pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 3.7W (Ta), 88W (Tc)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : D2PAK
Pake / Ka : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB