RJK6032DPH-E0#T2 Pricing (USD) [182616PC Stock]
- 1 pcs$0.58952
- Nimewo Pati:
- RJK6032DPH-E0#T2
- Manifakti:
- Renesas Electronics America
- Detaye deskripsyon:
- MOSFET N-CH 600V 3A TO251.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - FETs, MOSFETs - RF, Diodes - Rèkteur - Single, Tiristors - DIACs, SIDACs, Diodes - Rèkteur - Arrays, Diodes - Zener - Single, Transistors - Pwogramasyon Unijunction and Modil pouvwa chofè ...
- Avantaj konpetitif:
- We specialize in Renesas Electronics America RJK6032DPH-E0#T2 electronic components. RJK6032DPH-E0#T2 can be shipped within 24 hours after order. If you have any demands for RJK6032DPH-E0#T2, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RJK6032DPH-E0#T2 Atribi pwodwi yo
Nimewo Pati :
RJK6032DPH-E0#T2
Manifakti :
Renesas Electronics America
Deskripsyon :
MOSFET N-CH 600V 3A TO251
Seri :
-
Estati Pati :
Last Time Buy
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
600V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
3A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
4.3 Ohm @ 1.5A, 10V
Vgs (th) (Max) @ Id :
-
Chaje Gate (Qg) (Max) @ Vgs :
9nC @ 10V
Vgs (Max) :
±30V
Antre kapasite (Ciss) (Max) @ Vds :
285pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
40.3W (Tc)
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-251
Pake / Ka :
TO-251-3 Short Leads, IPak, TO-251AA
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