Nimewo Pati :
GP2M012A080NG
Manifakti :
Global Power Technologies Group
Deskripsyon :
MOSFET N-CH 800V 12A TO3PN
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
800V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
12A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
650 mOhm @ 6A, 10V
Vgs (th) (Max) @ Id :
5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
79nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
3370pF @ 25V
Disipasyon Pouvwa (Max) :
416W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-3PN
Pake / Ka :
TO-3P-3, SC-65-3