Diodes Incorporated - BS170PSTOB

KEY Part #: K6402669

[2624PC Stock]


    Nimewo Pati:
    BS170PSTOB
    Manifakti:
    Diodes Incorporated
    Detaye deskripsyon:
    MOSFET N-CH 60V 0.27A TO92-3.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Arrays, Transistors - Objektif espesyal, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - FETs, MOSFETs - Single, Transistors - IGBTs - Single, Modil pouvwa chofè, Diodes - Varyab kapasite (Varicaps, Varactors) and Transistors - FETs, MOSFETs - Arrays ...
    Avantaj konpetitif:
    We specialize in Diodes Incorporated BS170PSTOB electronic components. BS170PSTOB can be shipped within 24 hours after order. If you have any demands for BS170PSTOB, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    BS170PSTOB Atribi pwodwi yo

    Nimewo Pati : BS170PSTOB
    Manifakti : Diodes Incorporated
    Deskripsyon : MOSFET N-CH 60V 0.27A TO92-3
    Seri : -
    Estati Pati : Obsolete
    FET Kalite : N-Channel
    Teknoloji : MOSFET (Metal Oxide)
    Drenaj nan Voltage Sous (Vdss) : 60V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 270mA (Ta)
    Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
    RD sou (Max) @ Id, Vgs : 5 Ohm @ 200mA, 10V
    Vgs (th) (Max) @ Id : 3V @ 1mA
    Chaje Gate (Qg) (Max) @ Vgs : -
    Vgs (Max) : ±20V
    Antre kapasite (Ciss) (Max) @ Vds : 60pF @ 10V
    Karakteristik FET : -
    Disipasyon Pouvwa (Max) : 625mW (Ta)
    Operating Tanperati : -55°C ~ 150°C (TJ)
    Mounting Kalite : Through Hole
    Pake Aparèy Founisè : E-Line (TO-92 compatible)
    Pake / Ka : E-Line-3

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