Vishay Semiconductor Diodes Division - V12P8HM3_A/H

KEY Part #: K6429925

V12P8HM3_A/H Pricing (USD) [210089PC Stock]

  • 1 pcs$0.17606

Nimewo Pati:
V12P8HM3_A/H
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
DIODE SCHOTTKY 80V 12A TO277A. Schottky Diodes & Rectifiers TMBS 80V Vrrm eSMP AEC-Q101 Qualified
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
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Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division V12P8HM3_A/H electronic components. V12P8HM3_A/H can be shipped within 24 hours after order. If you have any demands for V12P8HM3_A/H, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

V12P8HM3_A/H Atribi pwodwi yo

Nimewo Pati : V12P8HM3_A/H
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE SCHOTTKY 80V 12A TO277A
Seri : Automotive, AEC-Q101, eSMP®, TMBS®
Estati Pati : Active
Kalite dyòd : Schottky
Voltage - DC Ranvèse (Vr) (Max) : 80V
Kouran - Mwayèn Rèktifye (Io) : 12A
Voltage - Forward (Vf) (Max) @ Si : 660mV @ 12A
Vitès : Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : -
Kouran - Fèy Reverse @ Vr : 1mA @ 80V
Kapasite @ Vr, F : -
Mounting Kalite : Surface Mount
Pake / Ka : TO-277, 3-PowerDFN
Pake Aparèy Founisè : TO-277A (SMPC)
Operating Tanperati - Junction : -40°C ~ 150°C

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