BSS123WQ-7-F Pricing (USD) [1370277PC Stock]
- 1 pcs$0.02699
- 3,000 pcs$0.02502
- Nimewo Pati:
- BSS123WQ-7-F
- Manifakti:
- Diodes Incorporated
- Detaye deskripsyon:
- MOSFET N-CH 100V 0.17A SOT323.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Arrays, Diodes - RF, Diodes - Rèkteur - Arrays, Transistors - IGBTs - Modil yo, Tiristors - DIACs, SIDACs, Transistors - Bipolè (BJT) - Single, Diodes - Rèkteur - Single and Transistors - Pwogramasyon Unijunction ...
- Avantaj konpetitif:
- We specialize in Diodes Incorporated BSS123WQ-7-F electronic components. BSS123WQ-7-F can be shipped within 24 hours after order. If you have any demands for BSS123WQ-7-F, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSS123WQ-7-F Atribi pwodwi yo
Nimewo Pati :
BSS123WQ-7-F
Manifakti :
Diodes Incorporated
Deskripsyon :
MOSFET N-CH 100V 0.17A SOT323
Seri :
-
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
170mA (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
6 Ohm @ 170mA, 10V
Vgs (th) (Max) @ Id :
2V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
-
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
60pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
200mW (Ta)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
SOT-323
Pake / Ka :
SC-70, SOT-323
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