Nimewo Pati :
GB50MPS17-247
Manifakti :
GeneSiC Semiconductor
Deskripsyon :
SIC DIODE 1700V 50A TO-247-2
Kalite dyòd :
Silicon Carbide Schottky
Voltage - DC Ranvèse (Vr) (Max) :
1700V
Kouran - Mwayèn Rèktifye (Io) :
216A (DC)
Voltage - Forward (Vf) (Max) @ Si :
1.8V @ 50A
Vitès :
No Recovery Time > 500mA (Io)
Ranvèse Tan Reverse (trr) :
0ns
Kouran - Fèy Reverse @ Vr :
60µA @ 1700V
Kapasite @ Vr, F :
3193pF @ 1V, 1MHz
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-247-2
Operating Tanperati - Junction :
-55°C ~ 175°C