Nimewo Pati :
IPI50R299CPXKSA1
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET N-CH 500V 12A TO262-3
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
500V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
12A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
299 mOhm @ 6.6A, 10V
Vgs (th) (Max) @ Id :
3.5V @ 440µA
Chaje Gate (Qg) (Max) @ Vgs :
31nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
1190pF @ 100V
Disipasyon Pouvwa (Max) :
104W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
PG-TO262-3
Pake / Ka :
TO-262-3 Long Leads, I²Pak, TO-262AA