Infineon Technologies - IPI50R299CPXKSA1

KEY Part #: K6405545

IPI50R299CPXKSA1 Pricing (USD) [8681PC Stock]

  • 1 pcs$0.99090
  • 10 pcs$0.89306
  • 100 pcs$0.71775

Nimewo Pati:
IPI50R299CPXKSA1
Manifakti:
Infineon Technologies
Detaye deskripsyon:
MOSFET N-CH 500V 12A TO262-3.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Single, Transistors - Bipolè (BJT) - RF, Transistors - Objektif espesyal, Transistors - FETs, MOSFETs - RF, Diodes - Rèkteur - Arrays, Transistors - FETs, MOSFETs - Single, Tiristors - TRIACs and Tiristors - DIACs, SIDACs ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPI50R299CPXKSA1 Atribi pwodwi yo

Nimewo Pati : IPI50R299CPXKSA1
Manifakti : Infineon Technologies
Deskripsyon : MOSFET N-CH 500V 12A TO262-3
Seri : CoolMOS™
Estati Pati : Obsolete
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 500V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 12A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 299 mOhm @ 6.6A, 10V
Vgs (th) (Max) @ Id : 3.5V @ 440µA
Chaje Gate (Qg) (Max) @ Vgs : 31nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 1190pF @ 100V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 104W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : PG-TO262-3
Pake / Ka : TO-262-3 Long Leads, I²Pak, TO-262AA

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