Toshiba Semiconductor and Storage - SSM3J56ACT,L3F

KEY Part #: K6421660

SSM3J56ACT,L3F Pricing (USD) [1311661PC Stock]

  • 1 pcs$0.03117
  • 10,000 pcs$0.03102

Nimewo Pati:
SSM3J56ACT,L3F
Manifakti:
Toshiba Semiconductor and Storage
Detaye deskripsyon:
MOSFET P-CH 20V 1.4A CST3.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - RF, Transistors - FETs, MOSFETs - Single, Transistors - Bipolè (BJT) - Arrays, Tiristors - TRIACs, Transistors - Bipolè (BJT) - RF, Tiristors - DIACs, SIDACs, Transistors - IGBTs - Single and Transistors - IGBTs - Modil yo ...
Avantaj konpetitif:
We specialize in Toshiba Semiconductor and Storage SSM3J56ACT,L3F electronic components. SSM3J56ACT,L3F can be shipped within 24 hours after order. If you have any demands for SSM3J56ACT,L3F, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SSM3J56ACT,L3F Atribi pwodwi yo

Nimewo Pati : SSM3J56ACT,L3F
Manifakti : Toshiba Semiconductor and Storage
Deskripsyon : MOSFET P-CH 20V 1.4A CST3
Seri : U-MOSVI
Estati Pati : Active
FET Kalite : P-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 1.4A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 1.2V, 4.5V
RD sou (Max) @ Id, Vgs : 390 mOhm @ 800mA, 4.5V
Vgs (th) (Max) @ Id : 1V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs : 1.6nC @ 4.5V
Vgs (Max) : ±8V
Antre kapasite (Ciss) (Max) @ Vds : 100pF @ 10V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 500mW (Ta)
Operating Tanperati : 150°C
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : CST3
Pake / Ka : SC-101, SOT-883