Vishay Siliconix - SI1442DH-T1-GE3

KEY Part #: K6421573

SI1442DH-T1-GE3 Pricing (USD) [853141PC Stock]

  • 1 pcs$0.04335
  • 3,000 pcs$0.04127

Nimewo Pati:
SI1442DH-T1-GE3
Manifakti:
Vishay Siliconix
Detaye deskripsyon:
MOSFET N-CH 12V 4A SOT-363.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - JFETs, Tiristors - SCR - Modil yo, Diodes - RF, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - Objektif espesyal, Diodes - Rèkteur - Arrays, Tranzistò - Bipolè (BJT) - Single, Pre-partial and Diodes - Zener - Single ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SI1442DH-T1-GE3 Atribi pwodwi yo

Nimewo Pati : SI1442DH-T1-GE3
Manifakti : Vishay Siliconix
Deskripsyon : MOSFET N-CH 12V 4A SOT-363
Seri : TrenchFET®
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 12V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 4A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 1.8V, 4.5V
RD sou (Max) @ Id, Vgs : 20 mOhm @ 6A, 4.5V
Vgs (th) (Max) @ Id : 1V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 33nC @ 8V
Vgs (Max) : ±8V
Antre kapasite (Ciss) (Max) @ Vds : 1010pF @ 6V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 1.56W (Ta), 2.8W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : SC-70-6 (SOT-363)
Pake / Ka : 6-TSSOP, SC-88, SOT-363