SSM3J356R,LF Pricing (USD) [1082173PC Stock]
- 1 pcs$0.03778
- 3,000 pcs$0.03760
- Nimewo Pati:
- SSM3J356R,LF
- Manifakti:
- Toshiba Semiconductor and Storage
- Detaye deskripsyon:
- MOSFET P-CH 60V 2A SOT-23F.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Single, Diodes - RF, Diodes - Zener - Single, Transistors - IGBTs - Arrays, Transistors - JFETs, Diodes - Bridge rèktifikateur, Transistors - IGBTs - Modil yo and Tiristors - SCR ...
- Avantaj konpetitif:
- We specialize in Toshiba Semiconductor and Storage SSM3J356R,LF electronic components. SSM3J356R,LF can be shipped within 24 hours after order. If you have any demands for SSM3J356R,LF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SSM3J356R,LF Atribi pwodwi yo
Nimewo Pati :
SSM3J356R,LF
Manifakti :
Toshiba Semiconductor and Storage
Deskripsyon :
MOSFET P-CH 60V 2A SOT-23F
Seri :
U-MOSVI
Estati Pati :
Active
FET Kalite :
P-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
2A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4V, 10V
RD sou (Max) @ Id, Vgs :
300 mOhm @ 1A, 10V
Vgs (th) (Max) @ Id :
2V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
8.3nC @ 10V
Vgs (Max) :
+10V, -20V
Antre kapasite (Ciss) (Max) @ Vds :
330pF @ 10V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
1W (Ta)
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
SOT-23F
Pake / Ka :
SOT-23-3 Flat Leads
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