[9416PC Stock]
- Nimewo Pati:
- IRGIB6B60KD116P
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- IGBT 600V 11A 38W TO220FP.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Diodes - RF, Modil pouvwa chofè, Diodes - Zener - Single, Transistors - IGBTs - Single, Transistors - FETs, MOSFETs - Single, Transistors - Bipolè (BJT) - Arrays, Pre-partial and Transistors - FETs, MOSFETs - RF ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies IRGIB6B60KD116P electronic components. IRGIB6B60KD116P can be shipped within 24 hours after order. If you have any demands for IRGIB6B60KD116P, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRGIB6B60KD116P Atribi pwodwi yo
Nimewo Pati :
IRGIB6B60KD116P
Manifakti :
Infineon Technologies
Deskripsyon :
IGBT 600V 11A 38W TO220FP
Seri :
-
Estati Pati :
Obsolete
Kalite IGBT :
NPT
Voltage - Pèseptè ki emèt deba (Max) :
600V
Kouran - Pèseptè (Ic) (Max) :
11A
Kouran - Pèseptè batman (Icm) :
22A
Vce (sou) (Max) @ Vge, Ic :
2.2V @ 15V, 5A
Pouvwa - Max :
38W
Oblije chanje enèji :
110µJ (on), 135µJ (off)
Kalite Antre :
Standard
Gate chaje :
18.2nC
Td (on / off) @ 25 ° C :
25ns/215ns
Kondisyon egzamen an :
400V, 5A, 100 Ohm, 15V
Ranvèse Tan Reverse (trr) :
70ns
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Through Hole
Pake / Ka :
TO-220-3 Full Pack
Pake Aparèy Founisè :
TO-220AB Full-Pak
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