Vishay Semiconductor Diodes Division - BAT54W-G3-18

KEY Part #: K6439905

BAT54W-G3-18 Pricing (USD) [1653783PC Stock]

  • 1 pcs$0.02237
  • 10,000 pcs$0.02053

Nimewo Pati:
BAT54W-G3-18
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
DIODE SCHOTTKY 30V 200MA SOD123.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Modil yo, Transistors - Bipolè (BJT) - Arrays, Transistors - FETs, MOSFETs - Single, Transistors - IGBTs - Single, Tiristors - SCR, Diodes - RF, Diodes - Zener - Single and Diodes - Bridge rèktifikateur ...
Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division BAT54W-G3-18 electronic components. BAT54W-G3-18 can be shipped within 24 hours after order. If you have any demands for BAT54W-G3-18, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BAT54W-G3-18 Atribi pwodwi yo

Nimewo Pati : BAT54W-G3-18
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE SCHOTTKY 30V 200MA SOD123
Seri : Automotive, AEC-Q101
Estati Pati : Active
Kalite dyòd : Schottky
Voltage - DC Ranvèse (Vr) (Max) : 30V
Kouran - Mwayèn Rèktifye (Io) : 200mA (DC)
Voltage - Forward (Vf) (Max) @ Si : 800mV @ 100mA
Vitès : Small Signal =< 200mA (Io), Any Speed
Ranvèse Tan Reverse (trr) : 5ns
Kouran - Fèy Reverse @ Vr : 2µA @ 25V
Kapasite @ Vr, F : 10pF @ 1V, 1MHz
Mounting Kalite : Surface Mount
Pake / Ka : SOD-123
Pake Aparèy Founisè : SOD-123
Operating Tanperati - Junction : 125°C (Max)

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