[1367PC Stock]
- Nimewo Pati:
- EGP50BHE3/54
- Manifakti:
- Vishay Semiconductor Diodes Division
- Detaye deskripsyon:
- DIODE GEN PURP 100V 5A GP20.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Objektif espesyal, Diodes - Rèkteur - Single, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - Bipolè (BJT) - Single, Transistors - IGBTs - Single, Transistors - IGBTs - Modil yo, Diodes - Rèkteur - Arrays and Diodes - RF ...
- Avantaj konpetitif:
- We specialize in Vishay Semiconductor Diodes Division EGP50BHE3/54 electronic components. EGP50BHE3/54 can be shipped within 24 hours after order. If you have any demands for EGP50BHE3/54, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
EGP50BHE3/54 Atribi pwodwi yo
Nimewo Pati :
EGP50BHE3/54
Manifakti :
Vishay Semiconductor Diodes Division
Deskripsyon :
DIODE GEN PURP 100V 5A GP20
Seri :
SUPERECTIFIER®
Estati Pati :
Obsolete
Kalite dyòd :
Standard
Voltage - DC Ranvèse (Vr) (Max) :
100V
Kouran - Mwayèn Rèktifye (Io) :
5A
Voltage - Forward (Vf) (Max) @ Si :
950mV @ 5A
Vitès :
Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
50ns
Kouran - Fèy Reverse @ Vr :
5µA @ 100V
Kapasite @ Vr, F :
95pF @ 4V, 1MHz
Mounting Kalite :
Through Hole
Pake / Ka :
DO-201AA, DO-27, Axial
Pake Aparèy Founisè :
GP20
Operating Tanperati - Junction :
-65°C ~ 150°C
Dènye nouvèl
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VS-8EWL06FN-M3
Vishay Semiconductor Diodes Division
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