IRF6665TRPBF Pricing (USD) [207548PC Stock]
- 1 pcs$0.20120
- 4,800 pcs$0.20020
- Nimewo Pati:
- IRF6665TRPBF
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET N-CH 100V 4.2A DIRECTFET.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Arrays, Transistors - Bipolè (BJT) - Single, Transistors - IGBTs - Single, Transistors - Bipolè (BJT) - Arrays, Tiristors - TRIACs, Tiristors - SCR, Tranzistò - Bipolè (BJT) - Single, Pre-partial and Transistors - FETs, MOSFETs - Single ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies IRF6665TRPBF electronic components. IRF6665TRPBF can be shipped within 24 hours after order. If you have any demands for IRF6665TRPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF6665TRPBF Atribi pwodwi yo
Nimewo Pati :
IRF6665TRPBF
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET N-CH 100V 4.2A DIRECTFET
Seri :
HEXFET®
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
4.2A (Ta), 19A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
62 mOhm @ 5A, 10V
Vgs (th) (Max) @ Id :
5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
13nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
530pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
2.2W (Ta), 42W (Tc)
Operating Tanperati :
-40°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
DIRECTFET™ SH
Pake / Ka :
DirectFET™ Isometric SH
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