Vishay Semiconductor Diodes Division - VS-180RKI80PBF

KEY Part #: K6458694

VS-180RKI80PBF Pricing (USD) [1546PC Stock]

  • 1 pcs$26.68145
  • 10 pcs$25.06360
  • 25 pcs$24.25524
  • 100 pcs$22.47644

Nimewo Pati:
VS-180RKI80PBF
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
MOD SCR PH CTRL 800V 180A TO-93. SCRs 180 Amp 800 Volt 285 Amp IT(RMS)
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - Single, Modil pouvwa chofè, Tiristors - SCR, Transistors - IGBTs - Single, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - Zener - Arrays, Transistors - FETs, MOSFETs - RF and Transistors - Pwogramasyon Unijunction ...
Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division VS-180RKI80PBF electronic components. VS-180RKI80PBF can be shipped within 24 hours after order. If you have any demands for VS-180RKI80PBF, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

VS-180RKI80PBF Atribi pwodwi yo

Nimewo Pati : VS-180RKI80PBF
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : MOD SCR PH CTRL 800V 180A TO-93
Seri : -
Estati Pati : Active
Voltage - Off State : 800V
Voltage - Gate deklanche (Vgt) (Max) : 2.5V
Kouran - Gate deklanche (Igt) (Max) : 150mA
Voltage - On State (Vm) (Max) : 1.35V
Kouran - Sou Eta (Li (AV)) (Max) : 180A
Kouran - Sou Eta (Li (RMS)) (Max) : 285A
Kouran - Kenbe (Ih) (Max) : 600mA
Kouran - Eta Off (Max) : 30mA
Kouran - Non Rep Repiblik 50, 60Hz (Itsm) : 3800A, 4000A
Kalite SCR : Standard Recovery
Operating Tanperati : -40°C ~ 125°C
Mounting Kalite : Chassis, Stud Mount
Pake / Ka : TO-209AB, TO-93-4, Stud
Pake Aparèy Founisè : TO-209AB (TO-93)

Ou ka enterese tou
  • BAT54T

    ON Semiconductor

    DIODE SCHOTTKY 30V 200MA SOT523. Schottky Diodes & Rectifiers 0.2A,30V,Surf Mt SCHOTTKY Barr DIODE

  • BAS21E6433HTMA1

    Infineon Technologies

    DIODE GEN PURP 200V 250MA SOT23. Diodes - General Purpose, Power, Switching Silicon Switch Diode

  • BAS116E6433HTMA1

    Infineon Technologies

    DIODE GEN PURP 80V 250MA SOT23-3. Diodes - General Purpose, Power, Switching Silicon Low Leakage Diode

  • BAR74E6327HTSA1

    Infineon Technologies

    DIODE GEN PURP 50V 250MA SOT23-3.

  • BAL99E6327HTSA1

    Infineon Technologies

    DIODE GEN PURP 80V 250MA SOT23-3. Diodes - General Purpose, Power, Switching Silicon Tuning Diode

  • BAL99E6433HTMA1

    Infineon Technologies

    DIODE GEN PURP 80V 250MA SOT23-3. Diodes - General Purpose, Power, Switching Silicon Tuning Diode