CSD17579Q5AT Pricing (USD) [209482PC Stock]
- 1 pcs$0.19523
- 250 pcs$0.19425
- 500 pcs$0.16532
- 750 pcs$0.14465
- 1,250 pcs$0.13226
- Nimewo Pati:
- CSD17579Q5AT
- Manifakti:
- Texas Instruments
- Detaye deskripsyon:
- MOSFET N-CH 30V 25A 8VSON.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Modil pouvwa chofè, Diodes - Bridge rèktifikateur, Transistors - Pwogramasyon Unijunction, Diodes - Zener - Arrays, Diodes - Rèkteur - Single, Transistors - FETs, MOSFETs - RF, Transistors - Objektif espesyal and Diodes - Varyab kapasite (Varicaps, Varactors) ...
- Avantaj konpetitif:
- We specialize in Texas Instruments CSD17579Q5AT electronic components. CSD17579Q5AT can be shipped within 24 hours after order. If you have any demands for CSD17579Q5AT, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
CSD17579Q5AT Atribi pwodwi yo
Nimewo Pati :
CSD17579Q5AT
Manifakti :
Texas Instruments
Deskripsyon :
MOSFET N-CH 30V 25A 8VSON
Seri :
NexFET™
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
25A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
9.7 mOhm @ 8A, 10V
Vgs (th) (Max) @ Id :
2V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
15.1nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
1030pF @ 15V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
3.1W (Ta), 36W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
8-VSONP (5x6)
Pake / Ka :
8-PowerTDFN
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