CSD19505KTTT Pricing (USD) [36005PC Stock]
- 1 pcs$1.29439
- 200 pcs$1.28795
- Nimewo Pati:
- CSD19505KTTT
- Manifakti:
- Texas Instruments
- Detaye deskripsyon:
- MOSFET N-CH 80V 200A DDPAK-3.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Rèkteur - Arrays, Diodes - Rèkteur - Single, Diodes - Bridge rèktifikateur, Tiristors - SCR, Transistors - FETs, MOSFETs - RF, Transistors - Pwogramasyon Unijunction and Transistors - IGBTs - Arrays ...
- Avantaj konpetitif:
- We specialize in Texas Instruments CSD19505KTTT electronic components. CSD19505KTTT can be shipped within 24 hours after order. If you have any demands for CSD19505KTTT, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
CSD19505KTTT Atribi pwodwi yo
Nimewo Pati :
CSD19505KTTT
Manifakti :
Texas Instruments
Deskripsyon :
MOSFET N-CH 80V 200A DDPAK-3
Seri :
NexFET™
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
80V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
200A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
6V, 10V
RD sou (Max) @ Id, Vgs :
3.1 mOhm @ 100A, 10V
Vgs (th) (Max) @ Id :
3.2V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
76nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
7920pF @ 40V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
300W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
DDPAK/TO-263-3
Pake / Ka :
TO-263-4, D²Pak (3 Leads + Tab), TO-263AA
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