Vishay Semiconductor Diodes Division - VS-GB150YG120NT

KEY Part #: K6532754

[1060PC Stock]


    Nimewo Pati:
    VS-GB150YG120NT
    Manifakti:
    Vishay Semiconductor Diodes Division
    Detaye deskripsyon:
    OUTPUT SW MODULES - ECONO IGBT.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Objektif espesyal, Diodes - Rèkteur - Single, Tiristors - SCR - Modil yo, Diodes - Bridge rèktifikateur, Diodes - Rèkteur - Arrays, Tiristors - TRIACs, Transistors - FETs, MOSFETs - Single and Transistors - FETs, MOSFETs - RF ...
    Avantaj konpetitif:
    We specialize in Vishay Semiconductor Diodes Division VS-GB150YG120NT electronic components. VS-GB150YG120NT can be shipped within 24 hours after order. If you have any demands for VS-GB150YG120NT, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    VS-GB150YG120NT Atribi pwodwi yo

    Nimewo Pati : VS-GB150YG120NT
    Manifakti : Vishay Semiconductor Diodes Division
    Deskripsyon : OUTPUT SW MODULES - ECONO IGBT
    Seri : -
    Estati Pati : Active
    Kalite IGBT : NPT
    Nou konte genyen : Full Bridge
    Voltage - Pèseptè ki emèt deba (Max) : 1200V
    Kouran - Pèseptè (Ic) (Max) : 182A
    Pouvwa - Max : 892W
    Vce (sou) (Max) @ Vge, Ic : 4V @ 15V, 200A
    Kouran - Cutoff Pèseptè (Max) : 120µA
    Antre kapasite (Cies) @ Vce : -
    Antre : Standard
    NTC thermistor : Yes
    Operating Tanperati : -55°C ~ 150°C (TJ)
    Mounting Kalite : Chassis Mount
    Pake / Ka : Module
    Pake Aparèy Founisè : ECONO3 4PACK

    Ou ka enterese tou
    • VS-GB90SA120U

      Vishay Semiconductor Diodes Division

      TRANSISTOR INSLTED GATE BIPOLAR.

    • VS-GB90DA60U

      Vishay Semiconductor Diodes Division

      TRANSISTOR INSLTED GATE BIPOLAR.

    • CPV362M4K

      Vishay Semiconductor Diodes Division

      IGBT SIP MODULE 600V 31 IMS-2.

    • CPV362M4U

      Vishay Semiconductor Diodes Division

      IGBT SIP MODULE 600V 3.9A IMS-2.

    • CPV363M4U

      Vishay Semiconductor Diodes Division

      IGBT SIP MODULE 600V 6.8A IMS-2.

    • VS-GB75NA60UF

      Vishay Semiconductor Diodes Division

      IGBT 600V 70A HS CHOPPER SOT-227. Rectifiers Output & SW Modules SOT-227 IGBT