Microsemi Corporation - APT35GP120BG

KEY Part #: K6421899

APT35GP120BG Pricing (USD) [5043PC Stock]

  • 1 pcs$8.58958
  • 10 pcs$7.42932
  • 25 pcs$6.87192
  • 100 pcs$6.31475
  • 250 pcs$5.75757

Nimewo Pati:
APT35GP120BG
Manifakti:
Microsemi Corporation
Detaye deskripsyon:
IGBT 1200V 96A 543W TO247.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Arrays, Transistors - IGBTs - Single, Diodes - RF, Transistors - Bipolè (BJT) - RF, Transistors - Pwogramasyon Unijunction, Tiristors - SCR - Modil yo, Diodes - Rèkteur - Single and Diodes - Zener - Arrays ...
Avantaj konpetitif:
We specialize in Microsemi Corporation APT35GP120BG electronic components. APT35GP120BG can be shipped within 24 hours after order. If you have any demands for APT35GP120BG, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

APT35GP120BG Atribi pwodwi yo

Nimewo Pati : APT35GP120BG
Manifakti : Microsemi Corporation
Deskripsyon : IGBT 1200V 96A 543W TO247
Seri : POWER MOS 7®
Estati Pati : Active
Kalite IGBT : PT
Voltage - Pèseptè ki emèt deba (Max) : 1200V
Kouran - Pèseptè (Ic) (Max) : 96A
Kouran - Pèseptè batman (Icm) : 140A
Vce (sou) (Max) @ Vge, Ic : 3.9V @ 15V, 35A
Pouvwa - Max : 543W
Oblije chanje enèji : 750µJ (on), 680µJ (off)
Kalite Antre : Standard
Gate chaje : 150nC
Td (on / off) @ 25 ° C : 16ns/94ns
Kondisyon egzamen an : 600V, 35A, 5 Ohm, 15V
Ranvèse Tan Reverse (trr) : -
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake / Ka : TO-247-3
Pake Aparèy Founisè : TO-247 [B]