Manifakti :
ON Semiconductor
Deskripsyon :
DIODE SCHOTTKY 1.2KV 8A TO220-2
Kalite dyòd :
Silicon Carbide Schottky
Voltage - DC Ranvèse (Vr) (Max) :
1200V
Kouran - Mwayèn Rèktifye (Io) :
8A (DC)
Voltage - Forward (Vf) (Max) @ Si :
1.75V @ 8A
Vitès :
Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
-
Kouran - Fèy Reverse @ Vr :
200µA @ 1200V
Kapasite @ Vr, F :
538pF @ 1V, 100kHz
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-220-2L
Operating Tanperati - Junction :
-55°C ~ 175°C