Vishay Semiconductor Diodes Division - AS3BJ-M3/5BT

KEY Part #: K6457841

AS3BJ-M3/5BT Pricing (USD) [716638PC Stock]

  • 1 pcs$0.05447
  • 6,400 pcs$0.05420

Nimewo Pati:
AS3BJ-M3/5BT
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
DIODE GEN PURP 600V 3A DO214AA. Rectifiers 3A, 600V, Avalanche, STD, SM RECT
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Transistors - IGBTs - Arrays, Transistors - JFETs, Transistors - IGBTs - Modil yo, Tiristors - DIACs, SIDACs, Tiristors - SCR, Diodes - Zener - Arrays and Transistors - Pwogramasyon Unijunction ...
Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division AS3BJ-M3/5BT electronic components. AS3BJ-M3/5BT can be shipped within 24 hours after order. If you have any demands for AS3BJ-M3/5BT, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

AS3BJ-M3/5BT Atribi pwodwi yo

Nimewo Pati : AS3BJ-M3/5BT
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE GEN PURP 600V 3A DO214AA
Seri : -
Estati Pati : Active
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : 600V
Kouran - Mwayèn Rèktifye (Io) : 3A
Voltage - Forward (Vf) (Max) @ Si : 1.05V @ 3A
Vitès : Standard Recovery >500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : 1.5µs
Kouran - Fèy Reverse @ Vr : 20µA @ 600V
Kapasite @ Vr, F : 40pF @ 4V, 1MHz
Mounting Kalite : Surface Mount
Pake / Ka : DO-214AA, SMB
Pake Aparèy Founisè : DO-214AA (SMB)
Operating Tanperati - Junction : -55°C ~ 175°C

Ou ka enterese tou
  • RGL34G-E3/98

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 400V 500MA DO213. Diodes - General Purpose, Power, Switching 400 Volt 0.5A 150ns 10 Amp IFSM

  • BYM07-300-E3/83

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 300V 500MA DO213. Rectifiers 300 Volt 0.5A 50ns Glass Passivated

  • BYM07-50-E3/98

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 50V 500MA DO213AA. Rectifiers 50 Volt 0.5A 50ns Glass Passivated

  • EGL34C-E3/98

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 150V 500MA DO213. Rectifiers 0.5Amp 150 Volt 50ns

  • EGL34F-E3/98

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 300V 500MA DO213. Rectifiers 0.5Amp 300 Volt 50ns

  • EGL34A-E3/83

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 50V 500MA DO213AA. Rectifiers 0.5 Amp 50 Volt 50ns