[117PC Stock]
- Nimewo Pati:
- BUZ31
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET N-CH 200V 14.5A TO220AB.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Single, Diodes - Rèkteur - Arrays, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - Pwogramasyon Unijunction, Diodes - Rèkteur - Single, Transistors - IGBTs - Modil yo, Modil pouvwa chofè and Tiristors - SCR - Modil yo ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies BUZ31 electronic components. BUZ31 can be shipped within 24 hours after order. If you have any demands for BUZ31, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BUZ31 Atribi pwodwi yo
Nimewo Pati :
BUZ31
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET N-CH 200V 14.5A TO220AB
Seri :
SIPMOS®
Estati Pati :
Obsolete
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
200V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
14.5A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
5V
RD sou (Max) @ Id, Vgs :
200 mOhm @ 9A, 5V
Vgs (th) (Max) @ Id :
4V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
-
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
1120pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
95W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
PG-TO220-3
Pake / Ka :
TO-220-3
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