Nexperia USA Inc. - BAT46WJ/DG/B2,115

KEY Part #: K6440371

[3841PC Stock]


    Nimewo Pati:
    BAT46WJ/DG/B2,115
    Manifakti:
    Nexperia USA Inc.
    Detaye deskripsyon:
    DIODE SCHOTTKY 100V 250MA SC90.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Modil pouvwa chofè, Transistors - JFETs, Transistors - Pwogramasyon Unijunction, Transistors - IGBTs - Single, Transistors - Objektif espesyal, Tiristors - SCR - Modil yo, Diodes - Varyab kapasite (Varicaps, Varactors) and Transistors - Bipolè (BJT) - Arrays, Pre-partial ...
    Avantaj konpetitif:
    We specialize in Nexperia USA Inc. BAT46WJ/DG/B2,115 electronic components. BAT46WJ/DG/B2,115 can be shipped within 24 hours after order. If you have any demands for BAT46WJ/DG/B2,115, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    BAT46WJ/DG/B2,115 Atribi pwodwi yo

    Nimewo Pati : BAT46WJ/DG/B2,115
    Manifakti : Nexperia USA Inc.
    Deskripsyon : DIODE SCHOTTKY 100V 250MA SC90
    Seri : Automotive, AEC-Q101
    Estati Pati : Obsolete
    Kalite dyòd : Schottky
    Voltage - DC Ranvèse (Vr) (Max) : 100V
    Kouran - Mwayèn Rèktifye (Io) : 250mA (DC)
    Voltage - Forward (Vf) (Max) @ Si : 850mV @ 250mA
    Vitès : Fast Recovery =< 500ns, > 200mA (Io)
    Ranvèse Tan Reverse (trr) : 5.9ns
    Kouran - Fèy Reverse @ Vr : 9µA @ 100V
    Kapasite @ Vr, F : 39pF @ 0V, 1MHz
    Mounting Kalite : Surface Mount
    Pake / Ka : SC-90, SOD-323F
    Pake Aparèy Founisè : SC-90
    Operating Tanperati - Junction : 150°C (Max)

    Ou ka enterese tou
    • IDB30E120ATMA1

      Infineon Technologies

      DIODE GEN PURP 1.2KV 50A TO263-3. Diodes - General Purpose, Power, Switching FAST SWITCH EMCON DIODE 1200V 30A

    • IDB30E60ATMA1

      Infineon Technologies

      DIODE GEN PURP 600V 52.3A TO263.

    • ES2AHM3/5BT

      Vishay Semiconductor Diodes Division

      DIODE GEN PURP 50V 2A DO214AA. Rectifiers 2A,50V,20NS,UF Rect,SMD

    • EGP20B-E3/54

      Vishay Semiconductor Diodes Division

      DIODE GEN PURP 100V 2A DO204AC. Rectifiers 2.0 Amp 100 Volt

    • 1N4585GP-E3/54

      Vishay Semiconductor Diodes Division

      DIODE GEN PURP 800V 1A DO204AC. Rectifiers 1A,800V,STD SUPERECT,DO-15

    • GP15M-E3/54

      Vishay Semiconductor Diodes Division

      DIODE GEN PURP 1KV 1.5A DO204. Rectifiers 1000 Volt 1.5 Amp 50 Amp IFSM