Nimewo Pati :
APTMC170AM30CT1AG
Manifakti :
Microsemi Corporation
Deskripsyon :
MOSFET 2N-CH 1700V 106A SP1
FET Kalite :
2 N Channel (Phase Leg)
Karakteristik FET :
Silicon Carbide (SiC)
Drenaj nan Voltage Sous (Vdss) :
1700V (1.7kV)
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
100A (Tc)
RD sou (Max) @ Id, Vgs :
30 mOhm @ 100A, 20V
Vgs (th) (Max) @ Id :
2.3V @ 5mA (Typ)
Chaje Gate (Qg) (Max) @ Vgs :
380nC @ 20V
Antre kapasite (Ciss) (Max) @ Vds :
6160pF @ 1000V
Operating Tanperati :
-40°C ~ 150°C (TJ)
Mounting Kalite :
Chassis Mount
Pake Aparèy Founisè :
SP1