[3978PC Stock]
- Nimewo Pati:
- SI5975DC-T1-GE3
- Manifakti:
- Vishay Siliconix
- Detaye deskripsyon:
- MOSFET 2P-CH 12V 3.1A CHIPFET.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Single, Transistors - Objektif espesyal, Transistors - Bipolè (BJT) - RF, Modil pouvwa chofè, Tiristors - TRIACs, Tiristors - SCR, Tranzistò - Bipolè (BJT) - Single, Pre-partial and Transistors - Pwogramasyon Unijunction ...
- Avantaj konpetitif:
- We specialize in Vishay Siliconix SI5975DC-T1-GE3 electronic components. SI5975DC-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI5975DC-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI5975DC-T1-GE3 Atribi pwodwi yo
Nimewo Pati :
SI5975DC-T1-GE3
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET 2P-CH 12V 3.1A CHIPFET
Seri :
TrenchFET®
Estati Pati :
Obsolete
FET Kalite :
2 P-Channel (Dual)
Karakteristik FET :
Logic Level Gate
Drenaj nan Voltage Sous (Vdss) :
12V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
3.1A
RD sou (Max) @ Id, Vgs :
86 mOhm @ 3.1A, 4.5V
Vgs (th) (Max) @ Id :
450mV @ 1mA (Min)
Chaje Gate (Qg) (Max) @ Vgs :
9nC @ 4.5V
Antre kapasite (Ciss) (Max) @ Vds :
-
Pouvwa - Max :
1.1W
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
8-SMD, Flat Lead
Pake Aparèy Founisè :
1206-8 ChipFET™
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