Vishay Semiconductor Diodes Division - 1N5627-TR

KEY Part #: K6440223

1N5627-TR Pricing (USD) [256926PC Stock]

  • 1 pcs$0.15192
  • 2,500 pcs$0.15116
  • 5,000 pcs$0.14396

Nimewo Pati:
1N5627-TR
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
DIODE AVALANCHE 800V 3A SOD64. Rectifiers 3.0 Amp 800 Volt
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Objektif espesyal, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Varyab kapasite (Varicaps, Varactors), Tiristors - SCR, Transistors - IGBTs - Single, Transistors - IGBTs - Modil yo, Diodes - Rèkteur - Arrays and Transistors - Bipolè (BJT) - Arrays ...
Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division 1N5627-TR electronic components. 1N5627-TR can be shipped within 24 hours after order. If you have any demands for 1N5627-TR, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

1N5627-TR Atribi pwodwi yo

Nimewo Pati : 1N5627-TR
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE AVALANCHE 800V 3A SOD64
Seri : -
Estati Pati : Active
Kalite dyòd : Avalanche
Voltage - DC Ranvèse (Vr) (Max) : 800V
Kouran - Mwayèn Rèktifye (Io) : 3A
Voltage - Forward (Vf) (Max) @ Si : 1V @ 3A
Vitès : Standard Recovery >500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : 7.5µs
Kouran - Fèy Reverse @ Vr : 1µA @ 800V
Kapasite @ Vr, F : 60pF @ 4V, 1MHz
Mounting Kalite : Through Hole
Pake / Ka : SOD-64, Axial
Pake Aparèy Founisè : SOD-64
Operating Tanperati - Junction : -55°C ~ 175°C

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