Nimewo Pati :
BSM300D12P2E001
Manifakti :
Rohm Semiconductor
Deskripsyon :
MOSFET 2N-CH 1200V 300A
FET Kalite :
2 N-Channel (Half Bridge)
Karakteristik FET :
Silicon Carbide (SiC)
Drenaj nan Voltage Sous (Vdss) :
1200V (1.2kV)
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
300A (Tc)
RD sou (Max) @ Id, Vgs :
-
Vgs (th) (Max) @ Id :
4V @ 68mA
Chaje Gate (Qg) (Max) @ Vgs :
-
Antre kapasite (Ciss) (Max) @ Vds :
35000pF @ 10V
Operating Tanperati :
-40°C ~ 150°C (TJ)
Mounting Kalite :
Chassis Mount
Pake Aparèy Founisè :
Module