STMicroelectronics - STGD18N40LZT4

KEY Part #: K6424935

STGD18N40LZT4 Pricing (USD) [114974PC Stock]

  • 1 pcs$0.32170
  • 2,500 pcs$0.28488
  • 5,000 pcs$0.27131

Nimewo Pati:
STGD18N40LZT4
Manifakti:
STMicroelectronics
Detaye deskripsyon:
IGBT 420V 25A 125W DPAK.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Single, Tiristors - DIACs, SIDACs, Tiristors - SCR, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - Bipolè (BJT) - RF, Transistors - FETs, MOSFETs - Single, Transistors - JFETs and Tiristors - SCR - Modil yo ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

STGD18N40LZT4 Atribi pwodwi yo

Nimewo Pati : STGD18N40LZT4
Manifakti : STMicroelectronics
Deskripsyon : IGBT 420V 25A 125W DPAK
Seri : Automotive, AEC-Q101, PowerMESH™
Estati Pati : Active
Kalite IGBT : -
Voltage - Pèseptè ki emèt deba (Max) : 420V
Kouran - Pèseptè (Ic) (Max) : 25A
Kouran - Pèseptè batman (Icm) : 40A
Vce (sou) (Max) @ Vge, Ic : 1.7V @ 4.5V, 10A
Pouvwa - Max : 125W
Oblije chanje enèji : -
Kalite Antre : Logic
Gate chaje : 29nC
Td (on / off) @ 25 ° C : 650ns/13.5µs
Kondisyon egzamen an : 300V, 10A, 5V
Ranvèse Tan Reverse (trr) : -
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : TO-252-3, DPak (2 Leads + Tab), SC-63
Pake Aparèy Founisè : DPAK