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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. NVMJS1D3N04CTWG

ON Semiconductor - NVMJS1D3N04CTWG

KEY Part #: K6419011

NVMJS1D3N04CTWG Pricing (USD) [87467PC Stock]

  • 1 pcs$0.44703
Nimewo Pati:
NVMJS1D3N04CTWG
Manifakti:
ON Semiconductor
Detaye deskripsyon:
TRENCH 6 40V SL NFET.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Arrays, Tiristors - DIACs, SIDACs, Transistors - JFETs, Diodes - RF, Transistors - Bipolè (BJT) - RF, Tiristors - TRIACs, Diodes - Varyab kapasite (Varicaps, Varactors) and Transistors - Pwogramasyon Unijunction ...
Avantaj konpetitif:
We specialize in ON Semiconductor NVMJS1D3N04CTWG electronic components. NVMJS1D3N04CTWG can be shipped within 24 hours after order. If you have any demands for NVMJS1D3N04CTWG, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

NVMJS1D3N04CTWG Atribi pwodwi yo

Nimewo Pati : NVMJS1D3N04CTWG
Manifakti : ON Semiconductor
Deskripsyon : TRENCH 6 40V SL NFET
Seri : Automotive, AEC-Q101
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 40V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 41A (Ta), 235A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 1.3 mOhm @ 50A, 10V
Vgs (th) (Max) @ Id : 3.5V @ 170µA
Chaje Gate (Qg) (Max) @ Vgs : 65nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 4300pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 3.8W (Ta), 128W (Tc)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : 8-LFPAK
Pake / Ka : SOT-1205, 8-LFPAK56

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